Suwon, South Korea

Jongmin Shin

This inventor holds 2 USPTO granted patents and 11 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jongmin Shin. Retrieved from https://idiyas.com/inventor/jongmin-shin-8xzl4rgf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Jongmin Shin - Innovator in Integrated Circuit and Semiconductor Technologies

Introduction

Jongmin Shin is an inventor based in Suwon-si, South Korea. He is known for his contributions to the fields of integrated circuits and semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Jongmin Shin has submitted several notable patent applications, including:

1. **Integrated Circuit Device and Method of Manufacturing the Same** - This application describes an integrated circuit device that includes a plurality of device isolation layers extending lengthwise in a first horizontal direction, along with gap-fill insulation layers and gate structures. The design also features source/drain regions and an insulation barrier, enhancing the functionality and efficiency of the device.

2. **Semiconductor Device and Manufacturing Method Thereof** - This application outlines a semiconductor device that comprises a support member, an active region, source and drain regions, and a gate electrode. The innovative design includes a substrate insulation layer and a power wire, which are crucial for the device's performance.

Conclusion

Jongmin Shin's work in integrated circuits and semiconductor technologies showcases his potential as an inventor. His latest patent applications reflect a commitment to advancing these fields, even in the absence of granted patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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