Suwon, South Korea

Jonghyun Rho

This inventor holds 1 USPTO granted patent. Top assignee: Sungkyunkwan University. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghyun Rho. Retrieved from https://idiyas.com/inventor/jonghyun-rho-3yv5nhu6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Jonghyun Rho: Innovator in Flexible Ferroelectric Memory Technology

Introduction

Jonghyun Rho is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, particularly focusing on flexible ferroelectric memory technology. His innovative work has the potential to revolutionize the way data is stored and accessed in various electronic devices.

Latest Patents

Jonghyun Rho holds 1 patent for a flexible ferroelectric memory device and its manufacturing method. This patent describes a flexible nonvolatile ferroelectric memory device, specifically a 1T-1R (1 Transistor-1 Resistor) flexible ferroelectric memory device. The invention aims to enhance the performance and versatility of memory devices in modern electronics.

Career Highlights

Jonghyun Rho is affiliated with Sungkyunkwan University, where he engages in research and development in the field of advanced memory technologies. His academic background and research initiatives have positioned him as a key figure in the innovation of flexible memory solutions.

Collaborations

Jonghyun Rho has collaborated with fellow researcher Jong-hyun Ahn, contributing to advancements in their shared field of study. Their partnership exemplifies the collaborative spirit of innovation in academia.

Conclusion

Jonghyun Rho's work in flexible ferroelectric memory devices showcases his commitment to advancing technology in the electronics sector. His contributions are paving the way for future innovations in memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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