Yongin, South Korea

Jonghwan Shin

This inventor holds 1 USPTO granted patent and 8 published patent applications. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghwan Shin. Retrieved from https://idiyas.com/inventor/jonghwan-shin-w2ww2dwm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jonghwan Shin and Display Panel Innovation.

Introduction

Jonghwan Shin is an inventor based in Yongin, South Korea. His patent work includes a display-panel design that addresses the structure of regions surrounding an opening in a display.

Latest Patents

The provided information lists one patent for Shin: “Display panel.” The invention describes a panel with an opening area, a surrounding display area, and an intermediate area between them. It includes a light-emitting diode in the display area, along with a support layer, a grooved organic insulating layer, a metal layer with a protrusion tip, and a cover layer. A functional layer extends into the intermediate area and includes a dummy functional layer. The design details how these components are arranged around the opening.

Career Highlights

Shin is associated with Samsung Display Co., Ltd. His listed patent reflects work on display-panel structures and component arrangements. The provided record attributes 1 patent to him.

Collaborations

The provided information names Yuri Oh and Kibok Yoo as Shin’s coworkers. Their inclusion indicates professional connections, but no specific joint patent or collaboration details were supplied.

Conclusion

Jonghwan Shin’s listed invention focuses on the structure of a display panel around an opening, and his work is associated with Samsung Display Co., Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…