Suwon-si, South Korea

Jonghoon Shin

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghoon Shin. Retrieved from https://idiyas.com/inventor/jonghoon-shin-ds4k752h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jonghoon Shin: Advancing Direct Memory Access Technology.

Introduction. Jonghoon Shin is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His patent work addresses the performance and management of direct memory access (DMA), a technology that enables devices to transfer data without continuous processor involvement.

Latest Patents. Shin is credited with 1 patent: “DMA Device, Operating Method Thereof, and Electronic Device Including DMA Device.” The invention describes a DMA device with a controller, a read-request issuing circuit, a read buffer, and a buffer-managing circuit. The buffer temporarily stores read data and its arrival time, while the managing circuit calculates average bus latency and average buffer residence time. Using these measurements, the device adjusts its read-request issuing capability to help manage data transfers.

Career Highlights. Shin’s listed patent reflects work on adaptive DMA operation. The disclosed method tracks request issuing times and data arrival times, calculates latency and buffer residence metrics, and uses those metrics to adjust subsequent read requests.

Collaborations. The patent lists Ingoo Heo and Hyeonggyu Kim as Shin’s coworkers, indicating a collaborative connection to the invention.

Conclusion. Jonghoon Shin’s patent focuses on adapting DMA read-request behavior using measured latency and buffer residence time, contributing to the development of data-transfer technology at Samsung Electronics Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…