Yongin, South Korea

Jongho Seon

This inventor holds 1 USPTO granted patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jongho Seon. Retrieved from https://idiyas.com/inventor/jongho-seon-6kwinvky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Jongho Seon: Innovator in High Efficiency Hollow Cathode Technology

Introduction

Jongho Seon is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of cathode technology, particularly with his innovative designs that enhance efficiency and reduce costs.

Latest Patents

Jongho Seon holds a patent for a "High efficiency hollow cathode and cathode system applying same." This invention relates to a high efficiency hollow cathode that comprises a tube made of at least two refractory metal parts. It features a gas providing unit and a gas outlet at the distal ends of the tube, along with an insert mounted inside the tube. The design allows for enhanced thermal stability, lifespan, and efficiency while also reducing costs.

Career Highlights

Jongho Seon is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to work on innovative projects. His expertise in cathode systems has positioned him as a key figure in advancing this technology.

Collaborations

Some of his notable coworkers include Wonho Choe and Youbong Lim, who collaborate with him on various research initiatives.

Conclusion

Jongho Seon's contributions to high efficiency hollow cathode technology exemplify his commitment to innovation and advancement in the field. His work not only enhances performance but also promotes cost-effectiveness in cathode systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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