Suwon, South Korea

Jonghan Ahn

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghan Ahn. Retrieved from https://idiyas.com/inventor/jonghan-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jonghan Ahn: Image Sensor Inventor

Introduction

Jonghan Ahn is an inventor based in Suwon, South Korea. His patent work includes an image sensor designed to measure the depth of objects within an unambiguous range. Ahn is associated with Samsung Electronics Co., Ltd.

Latest Patents

Ahn is named on 1 patent: “Image Sensor, Camera Module Including the Image Sensor, and Operating Method of the Image Sensor.” The invention describes an image sensor that uses modulation and demodulation clock signals with multiple phases. A phase selection circuit uses a random number to select a modulation signal and corresponding demodulation signals. A time-gating circuit controls when those signals are applied, based on the unambiguous range. The design is intended to support depth measurement for objects within that range.

Career Highlights

The available information identifies Ahn’s work on image-sensing technology and his association with Samsung Electronics. His patent addresses clock-signal selection and timing control in a camera module’s depth-measurement process.

Collaborations

The patent lists Samsung Electronics Co., Ltd. as the company associated with Ahn. No additional collaborators are specified in the provided information.

Conclusion

Jonghan Ahn’s documented invention focuses on improving depth measurement through coordinated modulation, demodulation, and time-gating techniques in an image sensor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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