Iksan, South Korea

Jong Soo Lee

This inventor holds 1 USPTO granted patent. Top assignee: Luxpia Co., Ltd.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Soo Lee. Retrieved from https://idiyas.com/inventor/jong-soo-lee-9mnod4zr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: The Innovations of Jong Soo Lee

Introduction

Jong Soo Lee is a prominent inventor based in Iksan, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing the efficiency of light-emitting devices.

Latest Patents

Jong Soo Lee holds a patent for a semiconductor light-emitting device and the method of manufacturing the same. This invention features a semiconductor light-emitting device that incorporates nano-needles. The design improves the extraction efficiency of photons, utilizing a gallium nitride (GaN) group multi-layer along with the nano-needles. This advancement represents a notable step forward in semiconductor technology.

Career Highlights

Jong Soo Lee is associated with Luxpia Co., Ltd., where he continues to develop cutting-edge technologies. His work has garnered attention for its potential applications in various industries. He is recognized for his expertise and innovative approach to semiconductor devices.

Collaborations

Some of his notable coworkers include Min Sang Lee and Young Ki Lee. Their collaborative efforts contribute to the ongoing advancements in their field.

Conclusion

Jong Soo Lee's contributions to semiconductor technology exemplify the spirit of innovation. His patented work on light-emitting devices showcases his commitment to improving efficiency in this critical area. His ongoing efforts at Luxpia Co., Ltd. continue to push the boundaries of what is possible in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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