Hwaseong, South Korea

Jong Mun Park

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Mun Park. Retrieved from https://idiyas.com/inventor/jong-mun-park-xmg6p8r3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 5.0

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Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Jong Mun Park: Innovator in Electron Beam Technology

Introduction

Jong Mun Park is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of electron beam technology, particularly through his innovative patent work. His expertise and creativity have positioned him as a valuable asset in the tech industry.

Latest Patents

Jong Mun Park holds a patent for an "Aperture system of electron beam apparatus, electron beam exposure apparatus, and electron beam exposure apparatus system." This patent describes an aperture system that includes multiple apertures, each featuring a first area with at least one through hole for electron beam passage and a second area with alignment keys. The design allows for precise alignment and functionality in electron beam applications.

Career Highlights

Park is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology. His work has been instrumental in advancing electron beam apparatus systems, which are crucial for various applications in electronics and manufacturing.

Collaborations

Throughout his career, Jong Mun Park has collaborated with talented colleagues, including Jin Hwan Choi and Byoung Sup Ahn. These partnerships have fostered innovation and contributed to the success of their projects.

Conclusion

Jong Mun Park's contributions to electron beam technology exemplify the spirit of innovation. His patent work and collaborations highlight his commitment to advancing technology in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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