Kyungki-Do, South Korea

Jong-Kuk Kim

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-Kuk Kim. Retrieved from https://idiyas.com/inventor/jong-kuk-kim-i4l422sy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Jong-Kuk Kim and Semiconductor Contact Technology.

Introduction

Jong-Kuk Kim is an inventor associated with Kyungki-Do, South Korea, and Hynix Semiconductor Inc. His patent work addresses the formation of metal contacts in semiconductor devices.

Latest Patents

The provided information lists 1 patent for Kim: “Method for Forming Metal Contact in Semiconductor Device.” The invention describes a process that forms bit lines and dielectric layers over a substrate divided into cell and peripheral regions. It uses two etching stages to create metal contact holes, first exposing an etch-stop layer and then exposing the bit lines. This staged approach provides a defined method for forming contacts within the device structure.

Career Highlights

Kim’s listed patent reflects work on semiconductor fabrication, particularly the formation of metal contacts and the layered structures used to reach bit lines. The available information associates his invention with Hynix Semiconductor Inc.

Collaborations

Jae-Seon Yu is identified as Kim’s coworker. The provided details do not specify whether Yu collaborated on the patent.

Conclusion

Jong-Kuk Kim’s listed invention focuses on a staged process for forming metal contacts in semiconductor devices, connecting his patent record with semiconductor manufacturing at Hynix Semiconductor Inc.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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