Company Filing History:
Years Active: 2010
Title: Jong-hyun Yang: Innovator in Ion Implantation Technology
Introduction
Jong-hyun Yang is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of ion implantation technology, particularly through his innovative patent.
Latest Patents
Yang holds a patent for an "Ion source element, ion implanter having the same and method of modifying the same." This invention provides a detailed design for an ion source element, which includes a chamber with a cavity divided into multiple inner sections. These sections are configured substantially perpendicularly to an axis defined through the centers of the cavity's ends. The design features larger inner sections near the center of the cavity that taper toward the ends. A filament is positioned at one end of the chamber to emit thermal electrons, while a repeller extends into the chamber from the opposite end. Additionally, an inlet is formed in one cavity wall to introduce gas with a dopant species, and a beam slit is created in the opposite wall to extract an ionized species from the chamber.
Career Highlights
Jong-hyun Yang is currently employed at Samsung Electronics Co., Ltd., where he continues to develop and refine technologies related to ion implantation. His work has been instrumental in advancing the capabilities of ion implanters, which are critical in semiconductor manufacturing.
Collaborations
Yang collaborates with talented colleagues, including Su-han Yun and Do-In Bae, who contribute to the innovative environment at Samsung Electronics.
Conclusion
Jong-hyun Yang's contributions to ion implantation technology exemplify the spirit of innovation in the semiconductor industry. His patent reflects a deep understanding of the complexities involved in ion source design, showcasing his expertise and commitment to advancing technology.