The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Sep. 15, 2006
Su-han Yun, Hwaseong-si, KR;
Jong-hyun Yang, Suwon-si, KR;
Do-in Bae, Changwon-si, KR;
Seong-gu Kim, Pyeongtaek-si, KR;
Su-han Yun, Hwaseong-si, KR;
Jong-hyun Yang, Suwon-si, KR;
Do-in Bae, Changwon-si, KR;
Seong-gu Kim, Pyeongtaek-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.