Jong-Hyun Ahn

Title: Jong-Hyun Ahn: Innovator in Thin Film Transistor Technology

Introduction

Jong-Hyun Ahn is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronics, particularly in the development of thin film transistors. With a total of 2 patents to his name, Ahn's work is recognized for its innovative approaches and practical applications.

Latest Patents

One of Jong-Hyun Ahn's latest patents is focused on a transferred thin film transistor and the method for manufacturing it. This invention includes a detailed process that involves forming a source region and a drain region that extend in a first direction on a substrate, along with a channel region situated between them. The method further describes the formation of trenches that define an active layer, which is separated from the substrate through an anisotropic etching process. The active layer is then attached to a second substrate, and a gate electrode is formed on the channel region of the active layer.

Career Highlights

Jong-Hyun Ahn is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of technology. His work has been instrumental in advancing the capabilities of electronic devices through innovative transistor designs.

Collaborations

Ahn has collaborated with several talented individuals in his field, including In-Kyu You and Hasan Musarrat. These partnerships have contributed to the successful development of his patents and have fostered a collaborative environment for innovation.

Conclusion

Jong-Hyun Ahn stands out as a key figure in the realm of thin film transistor technology. His contributions through patents and collaborations highlight his commitment to advancing electronic innovations.