Seoul, South Korea

Jong Hyeon Chae

This inventor holds 1 USPTO granted patent. Top assignee: M2n Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Hyeon Chae. Retrieved from https://idiyas.com/inventor/jong-hyeon-chae-0rlaunef

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Jong Hyeon Chae: Innovator in Probe Tip Fabrication

Introduction

Jong Hyeon Chae is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of probe tip fabrication, showcasing his innovative approach to enhancing precision in semiconductor technology.

Latest Patents

Jong Hyeon Chae holds a patent for a "Method for fabricating probe tip." This invention addresses the challenge of preventing a rapid increase in the surface size of the probe tip's front end, which can occur due to frequent contact with wafer chips. The method improves the precision of the probe tip by forming a front end on a silicon wafer, creating a first protective layer that is patterned to expose part of the front end, and subsequently forming the body of the probe tip in the area opened by the pattern.

Career Highlights

Jong Hyeon Chae is associated with M2N Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the methods used in probe tip fabrication, contributing to the efficiency and accuracy of semiconductor manufacturing processes.

Collaborations

Some of his coworkers include Ki Pil Hong and Hac Ju Lee, who collaborate with him on various projects within the company.

Conclusion

Jong Hyeon Chae's innovative methods in probe tip fabrication reflect his commitment to enhancing precision in semiconductor technology. His contributions are vital to the ongoing advancements in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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