Jong Hoan Sim

Title: Innovations of Jong Hoan Sim in Dual Metal Gates Technology

Introduction

Jong Hoan Sim is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. He is recognized for his innovative approach to forming dual metal gates, which enhances the performance of electronic devices. With a patent portfolio that includes a unique method for altering the work function of metals, Sim's work is paving the way for advancements in integrated circuit design.

Latest Patents

Jong Hoan Sim holds a patent for "Dual metal gates using one metal to alter work function of another metal." This patent describes methods of forming dual metal gates, which include a first metal layer (e.g., NMOS metal) on a gate dielectric layer and a second metal layer (e.g., PMOS metal) on the first metal layer. The second metal layer is designed to alter the work function of the first metal layer, thereby forming PMOS metal. The method also involves removing a portion of the second metal layer to expose the first metal layer in a specific region, followed by the formation of a silicon layer on the exposed first metal layer and the second metal layer in different regions. This innovative approach ensures that the gate dielectric layer remains protected from damage during the metal etch process.

Career Highlights

Jong Hoan Sim is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies in semiconductor fabrication. His work has been instrumental in improving the efficiency and reliability of electronic components, making a lasting impact on the industry.

Collaborations

Throughout his career, Sim has collaborated with esteemed colleagues, including Byoung Hun Lee and Sang Ho Bae. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Jong Hoan Sim's contributions to the field of semiconductor technology, particularly through his patent on dual metal gates, highlight his role as a leading inventor in the industry. His work not only advances technological capabilities but also sets the stage for future innovations in electronic design.