The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
May. 30, 2008
Byoung H. Lee, Austin, TX (US);
Sang Ho Bae, Seoul, KR;
Kisik Choi, Hopewell Junction, NY (US);
Rino Choi, Seoul, KR;
Craig Huffman, Krugerville, TX (US);
Prashant Majhi, Austin, TX (US);
Jong Hoan Sim, Austin, TX (US);
Seung-chul Song, Austin, TX (US);
Zhibo Zhang, San Diego, CA (US);
Byoung H. Lee, Austin, TX (US);
Sang Ho Bae, Seoul, KR;
Kisik Choi, Hopewell Junction, NY (US);
Rino Choi, Seoul, KR;
Craig Huffman, Krugerville, TX (US);
Prashant Majhi, Austin, TX (US);
Jong Hoan Sim, Austin, TX (US);
Seung-Chul Song, Austin, TX (US);
Zhibo Zhang, San Diego, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.