Jong Ho Lee

Title: Jong Ho Lee: Innovator in Semiconductor Technology

Introduction

Jong Ho Lee is a prominent inventor based in Fishkill, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors. His work focuses on enhancing the performance of p-type metal oxide semiconductor field effect transistors.

Latest Patents

Jong Ho Lee holds a patent for a method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors. This patent discloses embodiments of a p-type, silicon germanium (SiGe), high-k dielectric-metal gate, metal oxide semiconductor field effect transistor (PFET) that achieves an optimal threshold voltage (Vt). The invention also includes a complementary metal oxide semiconductor (CMOS) device that incorporates the PFET, along with methods for forming both the PFET and the CMOS device. The embodiments utilize negatively charged ions, such as fluorine, chlorine, bromine, and iodine, to selectively adjust the negative Vt of the PFET.

Career Highlights

Jong Ho Lee is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

He has collaborated with notable colleagues, including Xiangdong Chen and Weipeng Li, to further enhance the research and development efforts in his field.

Conclusion

Jong Ho Lee's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a key innovator in the industry. His work at IBM and collaborations with other experts underscore the importance of teamwork in driving technological advancements.