Seongnam, South Korea

Jong-an Kim

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-an Kim. Retrieved from https://idiyas.com/inventor/jong-an-kim-queve5zm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations of Jong-an Kim in Nondestructive Measurement Techniques.

Introduction

Jong-an Kim is a notable inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of nondestructive measurement techniques. His innovative approach has led to the development of a unique method for measuring the thickness of underlying layers in various materials.

Latest Patents

Jong-an Kim holds a patent for "Methods for nondestructive measurements of thickness of underlying layers." This method involves irradiating a sample with a pump laser pulse to generate an acoustic wave, which propagates through the sample over time. The process includes determining reflectance variations based on the reflection of a probe laser pulse, ultimately allowing for the accurate measurement of the underlying layer's thickness.

Career Highlights

Jong-an Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology and innovation. His work has been instrumental in advancing nondestructive testing methods, which are crucial in various industrial applications.

Collaborations

He has collaborated with notable colleagues such as Duck-mahn Oh and Si-hyeon Choi, contributing to the advancement of their shared research interests.

Conclusion

Jong-an Kim's innovative methods in nondestructive measurements exemplify the importance of research and development in technology. His contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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