This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Purdue Research Foundation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Jonathan William Turnley
Introduction
Jonathan William Turnley is an accomplished inventor based in Lafayette, Indiana. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of direct deposition of metal selenide semiconductors.
Latest Patents
Turnley holds a patent for a method titled "Direct solution deposition of metal selenide semiconductors using novel metal-selenium complexes and films made therefrom." This patent describes a process for the direct deposition of multinary metal polyselenide films. The method includes precipitating alkylammonium polyselenide with an antisolvent, redissolving the precipitated alkylammonium polyselenide with a solvent, and dissolving at least one metal source in the solution containing polyselenide ions to create a precursor solution. The metal sources can include elements such as Ag, Cu, Zn, Cd, In, Ga, Sn, Ge, As, CuSe, CuO, CuCl, and combinations thereof. Notably, the precursor solution is substantially sulfur-free. Turnley has 1 patent to his name.
Career Highlights
Jonathan William Turnley is associated with the Purdue Research Foundation, where he continues to advance his research and development efforts in semiconductor technologies. His work has the potential to impact various applications in electronics and materials science.
Collaborations
Turnley has collaborated with notable colleagues, including Rakesh Agrawal and Swapnil Deshmukh, contributing to a dynamic research environment that fosters innovation and discovery.
Conclusion
Jonathan William Turnley exemplifies the spirit of innovation in the field of semiconductor technology. His contributions through patents and collaborations highlight the importance of research in advancing modern technology.