Jonathan L Gossi

Title: Innovations by Jonathan L Gossi

Introduction

Jonathan L Gossi is an accomplished inventor based in Boise, ID (US). He has made significant contributions to the field of technology, particularly in the area of voltage control circuits. His innovative work has led to the development of a patent that addresses important aspects of memory cell management.

Latest Patents

Jonathan holds a patent for "Apparatuses and methods for adjusting deactivation voltages." This patent describes an apparatus that includes a voltage control circuit. The circuit is designed to receive an address and adjust a deactivation voltage of an access line associated with a target group of memory cells. This adjustment can change the voltage from a first level to a second level based on the provided address. Notably, the first voltage is typically lower than the second voltage, showcasing the innovative nature of his work.

Career Highlights

Jonathan is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His role at Micron allows him to apply his expertise in developing advanced technologies that enhance memory performance and efficiency. His contributions are vital to the company's ongoing success in the competitive tech landscape.

Collaborations

Jonathan has collaborated with notable colleagues, including Zhong-Yi Xia and Vikram K Bollu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas, further enhancing the quality of their work.

Conclusion

Jonathan L Gossi is a prominent inventor whose work in voltage control circuits has made a significant impact in the field of technology. His patent for adjusting deactivation voltages exemplifies his innovative spirit and dedication to advancing memory technology.