Webster, MA, United States of America

Jonathan E Moussa


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Jonathan E Moussa: A Journey in Magnetoresistance Technology

Introduction: Jonathan E Moussa, an accomplished inventor based in Webster, MA, has made significant strides in the field of semiconductor technology. With a patent to his name, he has demonstrated his expertise in enhancing magnetoresistance through innovative methods and systems. His work at TDK Corporation has positioned him as a key player in the advancement of electronics.

Latest Patents: Jonathan Moussa's notable patent, titled "Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions," addresses a vital area of semiconductor research. This invention details a method and system that utilizes finite element modeling techniques to analyze thin film semiconductors containing metallic inclusions. By focusing on applied magnetic fields and the device's geometry, the method enables researchers to compare device characteristics against predetermined qualities, thus facilitating modifications to achieve optimal performance.

Career Highlights: Jonathan E Moussa has established himself within TDK Corporation, where he has contributed to pioneering advancements in semiconductor technology. His understanding of complex scientific principles and dedication to innovation has led to his successful patent achievement. His work serves as a testament to his role in shaping the future of electronic devices.

Collaborations: Throughout his career, Jonathan has had the opportunity to collaborate with esteemed colleagues such as Daniel R Hines and Stuart A Solin. Working alongside these professionals, he has been able to leverage their collective expertise to propel his research and inventions forward, fostering an environment of collaboration and shared knowledge within the field.

Conclusion: Jonathan E Moussa exemplifies the spirit of innovation in the realm of semiconductor technology. His contributions, especially in the area of magnetoresistance, highlight the importance of creativity and collaboration in advancing scientific research. As he continues to work with TDK Corporation, one can look forward to future developments that will further enhance our understanding of thin film semiconductors.

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