Albuquerque, NM, United States of America

Jonathan E Macro


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: The Innovations of Jonathan E. Macro in MOS Circuit Technology

Introduction

Jonathan E. Macro is a visionary inventor based in Albuquerque, NM, who has made significant contributions to the field of integrated circuit technology. With a focus on enhancing the functionality of CMOS (Complementary Metal-Oxide-Semiconductor) circuits, Jonathan has developed innovative solutions that address common challenges faced in modern electronics.

Latest Patents

Jonathan holds a noteworthy patent titled "High Density Trench Isolation for MOS Circuits." This patent discloses a method of forming isolation trenches in CMOS integrated circuits. The innovative aspect of this invention is that the trench side walls are covered with a thin oxide layer, which prevents oxide charges from inverting the trench side walls. This crucial development allows for the use of highly doped polysilicon that features a high work function, successfully turning off the parasitic transistors at these side walls and thereby reducing the risk of latchup.

Career Highlights

Jonathan currently works at North American Philips Corporation, specifically within its Signetics Division. His role in this esteemed company highlights his dedication to advancing semiconductor technology. With a robust understanding of both theoretical and practical aspects of semiconductor design, Jonathan’s inventive spirit is evident in the patent he has developed.

Collaborations

Throughout his career, Jonathan has had the opportunity to collaborate with talented individuals such as Wayne I. Kinney and John P. Niemi. Together, they have contributed to various projects aimed at improving semiconductor technologies and driving innovation within the industry.

Conclusion

Jonathan E. Macro's work exemplifies the spirit of innovation in the field of semiconductor technology. Through his patented method for high-density trench isolation, he has addressed significant challenges in CMOS circuit design, marking his place as a notable inventor in Albuquerque, NM. His contributions continue to influence the way that integrated circuits are developed and implemented, ensuring the ongoing advancement of electronic devices in our tech-driven world.

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