Fort Collins, CO, United States of America

Jon W Byrn

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Jon W Byrn: Innovator in Semiconductor Technology

Introduction

Jon W Byrn is a notable inventor based in Fort Collins, Colorado. He has made significant contributions to the field of semiconductor technology, particularly in power dissipation control. His innovative approach has led to the development of a patent that addresses critical challenges in semiconductor device efficiency.

Latest Patents

Jon W Byrn holds a patent titled "Systems and methods for power dissipation control in a semiconductor device." This invention provides various embodiments that govern power dissipation in semiconductor devices. The patent describes semiconductor devices that include a first function circuit, a second function circuit, and a power state change control circuit. The power state change control circuit is designed to determine a combination of power states of the first and second function circuits, ensuring that the overall power dissipation remains within a specified level.

Career Highlights

Throughout his career, Jon W Byrn has been associated with LSI Corporation, where he has applied his expertise in semiconductor technology. His work has been instrumental in advancing the efficiency and performance of semiconductor devices.

Collaborations

Jon has collaborated with notable colleagues, including George Wayne Nation and Gary Scott Delp. Their combined efforts have contributed to the development of innovative solutions in the semiconductor industry.

Conclusion

Jon W Byrn's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor in the field. His work continues to impact the efficiency of semiconductor devices, showcasing the importance of innovation in technology.

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