Jon Gladish

Title: Jon Gladish: Innovator in IGBT Gate Drive Technology

Introduction

Jon Gladish is a notable inventor based in Pittston, PA (US). He has made significant contributions to the field of power electronics, particularly with his innovative designs that enhance the performance and reliability of IGBT (Insulated Gate Bipolar Transistor) circuits. His work is characterized by a focus on improving fault tolerance in electronic systems.

Latest Patents

Jon Gladish holds a patent for an IGBT gate drive circuit with short circuit protection. This invention includes a mechanism for detecting when the collector-to-emitter voltage (Vce) of a turned-on IGBT exceeds a preset level, indicating a fault condition such as a short circuit. In response to this increase in Vce, the IGBT is turned off in two steps. Initially, the turn-on gate drive is reduced to a level above the threshold voltage of the IGBT, which decreases the current flowing through it and reduces peak power dissipation. This approach extends the duration the IGBT can withstand fault conditions. Subsequently, the gate drive is gradually decreased until the IGBT is completely turned off.

Career Highlights

Jon Gladish is currently employed at Intersil Corporation, where he continues to develop advanced technologies in power management. His expertise in IGBT circuits has positioned him as a valuable asset in the field of electronic engineering.

Collaborations

Throughout his career, Jon has collaborated with talented professionals such as Sampat S Shekhawat and Anup Bhalla. These collaborations have contributed to the advancement of innovative solutions in power electronics.

Conclusion

Jon Gladish's contributions to IGBT technology demonstrate his commitment to enhancing the reliability and efficiency of electronic systems. His innovative patent reflects a deep understanding of power electronics and a dedication to solving complex engineering challenges.