Jon Dahm

Title: Jon Dahm: Innovator in Semiconductor Technology

Introduction

Jon Dahm is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. He is recognized for his innovative approach to forming concurrent top oxides using reoxidized silicon, which has implications for the efficiency and performance of electronic devices.

Latest Patents

Jon Dahm holds a patent for a method that involves a stack of oxide and silicon nitride grown over a patterned polysilicon line, which typically acts as a bottom capacitor plate. The process includes depositing a thin layer of amorphous or polycrystalline silicon over a blanket silicon nitride film. The thickness of the deposited silicon layer is optimized to achieve the desired amount of oxide over the silicon nitride. The oxide/nitride/silicon stack is then patterned and etched, with subsequent cleaning performed using protective silicon deposits. The entire structure undergoes thermal oxidation, transforming the deposited silicon into silicon oxide, while a second gate oxide is formed where the structure has been cleared down to the substrate.

Career Highlights

Jon Dahm is currently employed at Motorola Corporation, where he continues to work on advancements in semiconductor technology. His innovative methods have contributed to the development of more efficient electronic components, enhancing the performance of various devices.

Collaborations

Jon has collaborated with talented coworkers, including Bich-Yen Nguyen and Sergio A. Ajuria, who have also contributed to the advancements in semiconductor technology.

Conclusion

Jon Dahm's work exemplifies the spirit of innovation in the semiconductor industry. His patented methods and collaborations highlight the importance of teamwork in driving technological advancements.