The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 1997
Filed:
Aug. 01, 1994
Bich-Yen Nguyen, Austin, TX (US);
Sergio A Ajuria, Austin, TX (US);
Wayne Paulson, Austin, TX (US);
Jon Dahm, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A stack of oxide (16) and silicon nitride (18) is grown/deposited over a patterned polysilicon line, which typically acts as a bottom capacitor plate. A thin layer of amorphous or polycrystalline silicon (20) is deposited over the blanket silicon nitride film. The thickness of the deposited silicon layer must be optimized according to the final amount of oxide desired over the silicon nitride, which will be roughly twice the thickness of the deposited silicon film. The oxide/nitride/silicon stack is then patterned and etched, stopping either at or underneath the bottom oxide. Any subsequent cleaning in potentially oxide-etching chemistries (including HF) is done with the protective silicon deposit on top of the silicon nitride. The entire structure is then thermally oxidized, transforming the deposited silicon into silicon oxide (30). Where the structure has been cleared down to the substrate by etching, a second gate oxide is simultaneously formed.