Springfield, MO, United States of America

Jon C Hodgson

This inventor holds 1 USPTO granted patent. Top assignee: Addium, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jon C Hodgson. Retrieved from https://idiyas.com/inventor/jon-c-hodgson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jon C. Hodgson and Fertigation Sensor Innovation.

Introduction

Jon C. Hodgson is an inventor associated with Springfield, Missouri, and Addium, Inc. His work includes a patented sensor system designed to monitor fertigation solutions and provide information about conditions affecting plant growth.

Latest Patents

Hodgson is credited with 1 patent, titled “Fertigation Feed Sensor System.” The invention uses two sensor systems, each with a container that collects feed solution from a fertigation source. The solution contains water and fertilizer mixed at a target concentration ratio.

Sensors in the two systems measure volumetric flow rates, electrical conductivity, and permittivity before and after the solution is supplied to plants. These measurements can provide data about plant development and growing conditions.

Career Highlights

Hodgson’s listed patent connects sensor technology with agricultural fertigation. The system is designed to help assess how a water-and-fertilizer solution moves through a growing setup and to provide measurements relevant to plant development.

Collaborations

Hodgson’s listed coworkers include Gaylon S. Campbell and Scott H. Campbell. The available information identifies these professional associations but does not specify their roles in the patent.

Conclusion

Jon C. Hodgson’s patented fertigation sensor system applies measurement technology to agricultural monitoring, offering data that can help characterize plant growth conditions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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