Hong Kong, China

Johnny K Sin

This inventor holds 2 USPTO granted patents. Top assignee: North American Philips Corporation. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Johnny K Sin. Retrieved from https://idiyas.com/inventor/johnny-k-sin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1993

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2 patents (USPTO):Explore Patents

Title: Innovations of Johnny K Sin

Introduction

Johnny K Sin is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of power integrated circuits and semiconductor devices. With a total of 2 patents, his work showcases innovative solutions to common challenges in electronics.

Latest Patents

One of his latest patents is for a power integrated circuit with latch-up prevention. This invention includes a substrate with an overlying epitaxial surface layer of opposite conductivity type. A semiconductor power device, such as a high-power diode or lateral MOS transistor, is located in the epitaxial layer and forms a p-n junction diode with the substrate. The design also features a separate semiconductor well region in the epitaxial layer, where low-power semiconductor circuit elements are formed. To minimize latch-up issues, the circuit is equipped with a collector region and an isolation region between the power device and the well region.

Another significant patent by Johnny K Sin is for lateral trench-gate bipolar transistors. This device includes spaced-apart, surface-adjoining, laterally-oriented anode and cathode regions. A channel region partially surrounds the cathode region, and a gate region is provided adjacent to, but insulated from, both the cathode and channel regions. The gate region extends vertically to induce a conduction channel during operation. These devices are fabricated in an epitaxial surface layer, offering advantages such as low on-resistance, fast switching speed, high breakdown voltage, and high latch-up current density.

Career Highlights

Johnny K Sin is currently employed at North American Philips Corporation, where he continues to innovate in the field of semiconductor technology. His work has had a significant impact on the development of efficient electronic devices.

Collaborations

He has collaborated with notable coworkers, including Barry M Singer and Satyendranath Mukherjee, contributing to various projects and advancements in technology.

Conclusion

Johnny K Sin's contributions to the field of electronics through his patents and work at North American Philips Corporation highlight his role as a leading inventor. His innovative designs continue to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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