John William Stiebritz, Jr

Title: John William Stiebritz, Jr.: Innovator in Silicon Etching Technology

Introduction

John William Stiebritz, Jr. is a notable inventor based in Somers, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon etching methods. His innovative approach addresses critical challenges in the manufacturing of CMOS transistors.

Latest Patents

Stiebritz holds a patent for a silicon etching method. This method incorporates first and second steps of reactive ion etching through a patterned oxide layer in respective atmospheres of HBr, Cl.sub.2, and O.sub.2. The process then continues with HBr and O.sub.2 in situ by terminating the first etching step and removing substantially all Cl.sub.2 before proceeding with the second step of etching. This invention effectively overcomes the problem of uneven etching of n+ and p+ silicon gates, which is crucial for forming sub 0.25 micron gate lengths and vertical sidewalls while stopping on the gate oxide. Stiebritz's patent is a testament to his innovative spirit and technical expertise.

Career Highlights

Stiebritz has had a distinguished career, working at the International Business Machines Corporation (IBM). His work has significantly impacted the semiconductor industry, particularly in enhancing the precision of silicon etching processes. His contributions have been instrumental in advancing the technology used in modern electronics.

Collaborations

Throughout his career, Stiebritz has collaborated with talented individuals such as Young Hoon Lee and Keith Raymond Milkove. These collaborations have fostered innovation and have led to advancements in semiconductor technology.

Conclusion

John William Stiebritz, Jr. is a prominent figure in the field of silicon etching technology. His innovative methods and contributions to the semiconductor industry continue to influence the development of advanced electronic devices.