Plainfield, NJ, United States of America

John R Hayes

This inventor holds 1 USPTO granted patent. Top assignee: American Telephone & Telegraph Co., At&t Bell Laboratories. Active years: 1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John R Hayes. Retrieved from https://idiyas.com/inventor/john-r-hayes-vlspz2sv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: John R Hayes: Pioneering Innovations in Heterojunction Bipolar Transistors

Introduction:

John R Hayes, a brilliant inventor hailing from Plainfield, NJ (US), is a visionary whose dedication to innovation has resulted in the creation of groundbreaking technologies that have significantly influenced our modern world.

Latest Patents:

One of John R Hayes' notable patents is the Heterojunction Bipolar Transistor, which features mechanisms for altering carrier transport properties. This patent stands as a testament to his expertise in the field of transistors and semiconductor technology.

Career Highlights:

John R Hayes is a valued member of AT&T Bell Laboratories, where he has been instrumental in driving forward technological advancements. His contributions have played a crucial role in shaping the telecommunications industry and beyond.

Collaborations:

Throughout his career, John R Hayes has had the privilege of working alongside esteemed colleagues such as Federico Capasso and Arthur C Gossard. Together, they have brought forth innovative solutions and pushed the boundaries of scientific discovery.

Conclusion:

In conclusion, John R Hayes stands as a luminous figure in the realm of technological innovation, with his pioneering work in heterojunction bipolar transistors leaving an indelible mark on the landscape of modern technology. His passion for pushing the boundaries of what is possible serves as an inspiration for aspiring inventors and visionaries alike.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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