This inventor holds 1 USPTO granted patent. Top assignee: General Electric Company. Active years: 1988.
Company Filing History:
Years Active: 1988
Title: John R Appert: Innovator in Photodiode Technology
Introduction
John R Appert is a notable inventor based in Levittown, PA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on photodiodes. His expertise and creativity have led to the development of a unique patent that enhances the functionality of photodiodes.
Latest Patents
John R Appert holds a patent for a "Rear entry photodiode with three contacts." This semiconductor photodiode features a substrate of semi-insulating indium phosphide, which has a first layer of highly doped P type indium phosphide on its surface. An active second layer of N type indium gallium arsenide is positioned on the first layer, while a third layer of N type indium gallium arsenide or indium phosphide is placed on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. The design includes a first contact on the third layer and a second contact on the first layer. Additionally, a buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer. This innovative design enhances the performance and efficiency of photodiodes.
Career Highlights
John R Appert is associated with General Electric Company, where he has contributed to various projects and advancements in technology. His work has been instrumental in pushing the boundaries of semiconductor applications, particularly in photodiode technology.
Collaborations
Some of his notable coworkers include Paul P Webb and Ronald E Enstrom. Their collaborative efforts have likely contributed to the innovative environment at General Electric Company.
Conclusion
John R Appert's contributions to the field of photodiodes exemplify the spirit of innovation and creativity in technology. His patent reflects a significant advancement in semiconductor design, showcasing his expertise and dedication to improving electronic components.