John O Heightley

Title: The Innovations of John O Heightley

Introduction

John O Heightley is a notable inventor based in Monument, Colorado. He has made significant contributions to the field of memory technology, particularly with his innovative patent related to MOS memory systems. His work has implications for improving the reliability and efficiency of memory storage solutions.

Latest Patents

John O Heightley holds a patent for a "Redundancy scheme for an MOS memory." This invention describes a redundancy scheme designed for use with an MOS memory that includes a main array of memory cells and a number of spare memory cells. The patent outlines a method for testing memory cells for operability through conventional probe tests. When a defective memory cell is identified, an on-chip address controller stores the address of the defective cell and provides a continuous electrical indication of it. This allows for the seamless replacement of defective cells with spare ones during normal memory operation.

Career Highlights

Heightley has worked at Inmos Limited, where he has been able to apply his expertise in memory technology. His innovative approach to redundancy in memory systems has positioned him as a key figure in the development of more reliable memory solutions. His patent reflects his commitment to enhancing the performance of memory devices.

Collaborations

Throughout his career, John O Heightley has collaborated with talented individuals such as Rahul Sud and Kim Carver Hardee. These collaborations have likely contributed to the advancement of his work and the successful development of his patent.

Conclusion

John O Heightley's contributions to the field of memory technology through his innovative patent demonstrate his expertise and commitment to improving memory systems. His work continues to influence the industry and enhance the reliability of memory storage solutions.