John M Young

Title: John M Young - Innovator in Gallium Arsenide Technology

Introduction

John M Young is a notable inventor based in Essex, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide field effect transistors. His innovative work has led to advancements in the manufacturing processes of these essential components.

Latest Patents

John M Young holds a patent for a method of manufacturing gallium arsenide field effect transistors. This patent describes a self-aligned gate structure for a compound semiconductor MESFET, which is formed from a lower silicon layer and an upper metal region, such as nickel. The nickel region serves as an etch mask for the silicon and subsequently as an implantation mask for the drain and source regions. The etching process creates an undercut that defines the gate separation from the drain and source. Heating the structure to anneal the implant allows the metal to diffuse into the silicon, resulting in a compound silicide gate structure.

Career Highlights

John M Young is associated with the Itt Gallium Arsenide Technology Center, a division of Itt Corporation. His work at this institution has been pivotal in advancing gallium arsenide technology, which is crucial for high-frequency and high-power applications.

Collaborations

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Conclusion

John M Young's contributions to gallium arsenide technology and his innovative patent demonstrate his significant role in the field of semiconductor manufacturing. His work continues to influence advancements in this critical area of technology.