The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 1989
Filed:
Mar. 11, 1985
Applicant:
Inventor:
John M Young, Essex, GB;
Assignee:
ITT Gallium Arsenide Technology Center, A Division of ITT Corporation, Roanoke, VA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437912 ;
Abstract
A self-aligned gate structure for a compound semiconductor MESFET is formed rom a lower silicon layer and an upper metal, e.g. nickel, region. The nickel region forms an etch mask for the silicon and subsequently an implantation mask for the drain and source regions. Etching of the silicon provides an undercut whereby the gate separation from the drain and source is defined. Heating the structure to anneal the implant diffuses the metal into the silicon to form a compound silicide gate structure.