John M Clayton, Jr

Title: Innovations of John M Clayton, Jr.

Introduction

John M Clayton, Jr. is an accomplished inventor based in Apex, NC (US). He has made significant contributions to the field of silicon carbide power devices. His innovative work has led to the development of a unique patent that addresses key challenges in semiconductor technology.

Latest Patents

John M Clayton, Jr. holds a patent for "Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts." This patent describes a silicon carbide power device that is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate. The process involves partially removing the n-type silicon carbide substrate to expose the p-type silicon carbide epitaxial layer. An ohmic contact is then formed on the exposed p-type layer. This innovative approach helps to reduce or eliminate the disadvantages associated with using a p-type substrate.

Career Highlights

John M Clayton, Jr. is currently associated with Cree GmbH, a leading company in the semiconductor industry. His work at Cree GmbH focuses on advancing silicon carbide technology, which is crucial for high-performance power devices. His expertise and innovative mindset have positioned him as a valuable asset in the field.

Collaborations

John has collaborated with notable colleagues such as Mrinal Kanti Das and Qingchun Zhang. Their combined efforts contribute to the ongoing advancements in silicon carbide technology and power devices.

Conclusion

John M Clayton, Jr. is a prominent inventor whose work in silicon carbide power devices has made a significant impact in the semiconductor industry. His innovative patent and collaboration with esteemed colleagues highlight his dedication to advancing technology.