The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
May. 31, 2007
Mrinal Kanti Das, Durham, NC (US);
Qingchun Zhang, Cary, NC (US);
John M. Clayton, Jr., Apex, NC (US);
Matthew Donofrio, Raleigh, NC (US);
Mrinal Kanti Das, Durham, NC (US);
Qingchun Zhang, Cary, NC (US);
John M. Clayton, Jr., Apex, NC (US);
Matthew Donofrio, Raleigh, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.