This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2010-2011.
Company Filing History:
Years Active: 2010-2011
Title: Innovations of John Lane Gertas
Introduction
John Lane Gertas is a notable inventor based in Frisco, TX (US). He has made significant contributions to the field of ferroelectric memory technology. With a total of 2 patents, Gertas has developed innovative methods for identifying and repairing failing bits in ferroelectric memory devices.
Latest Patents
Gertas's latest patents include a method for screening and repairing bits in ferroelectric memory devices. This method involves writing same state data to a ferroelectric capacitor and baking it for a specified period at a selected temperature. After the baking process, a same state read is performed to determine if an error has occurred. The specified baking time can range from 10 minutes to 2 hours, with temperatures between 85°C and 150°C. If errors are detected, repairs can be made. Additionally, a related method can detect imprinted bits through a series of writes and bakes, followed by reads to identify any opposite state errors or imprints.
Career Highlights
Gertas is currently employed at Texas Instruments Corporation, where he continues to innovate in the field of memory technology. His work has contributed to advancements in the reliability and performance of ferroelectric memory devices.
Collaborations
Gertas has collaborated with notable coworkers, including Keith A Remack and John Anthony Rodriguez. Their combined expertise has fostered a productive environment for innovation and development.
Conclusion
John Lane Gertas is a prominent inventor whose work in ferroelectric memory technology has led to significant advancements in the field. His innovative methods for identifying and repairing memory errors demonstrate his commitment to enhancing technology.