This inventor holds 1 USPTO granted patent. Top assignees: Sandia Corporation, The City University of New York. Active years: 2015.
Company Filing History:

Years Active: 2015
Title: The Innovations of John L Reno
Introduction
John L Reno is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of plasmonics, particularly with his innovative work on tunable plasmonic crystals. His research has implications for various advanced technologies, including terahertz and infrared applications.
Latest Patents
Reno holds a patent for a tunable plasmonic crystal. This invention comprises several periods in a two-dimensional electron or hole gas plasmonic medium that is both extremely subwavelength (λ/100) and tunable through the application of voltages to metal electrodes. The tuning of the plasmonic crystal band edges can be realized in materials such as semiconductors and graphene, allowing for active control of the plasmonic crystal dispersion in the terahertz and infrared spectral regions. This tunable plasmonic crystal provides a useful degree of freedom for applications in slow light devices, voltage-tunable waveguides, filters, ultra-sensitive direct and heterodyne THz detectors, and THz oscillators. He has 1 patent to his name.
Career Highlights
Throughout his career, John L Reno has worked with prominent organizations, including Sandia Corporation and City University of New York. His work has been instrumental in advancing the understanding and application of plasmonic materials.
Collaborations
Reno has collaborated with notable colleagues such as Gregory Conrad Dyer and Eric A Shaner. Their combined expertise has contributed to the success of various projects in the field of plasmonics.
Conclusion
John L Reno's innovative work in the realm of tunable plasmonic crystals showcases his significant contributions to technology and science. His inventions continue to influence advancements in various applications, solidifying his reputation as a leading inventor in his field.