John L Heaton

Title: John L Heaton: Innovator in Semiconductor Technology

Introduction

John L Heaton is a notable inventor based in Bedford, MA (US), recognized for his contributions to semiconductor technology. He holds a patent that showcases his innovative approach to fabricating semiconductor devices, particularly focusing on gallium arsenide.

Latest Patents

Heaton's patent, titled "Selective epitaxial growth of gallium arsenide with selective orientation," presents a method for fabricating semiconductor devices on semi-insulating GaAs substrates. This method involves pre-etched holes in the substrate that are covered with a dielectric, which is then etched to expose the substrate only at the bottom of the holes. The epitaxial growth of active GaAs in these holes can proceed with a single crystallographic orientation. The dielectric covering the sidewalls of the holes effectively prevents unwanted random growth and ensures better surface morphology of the active area.

Career Highlights

Heaton has made significant strides in his career, working with Sperry Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the field, particularly in the development of more efficient semiconductor devices.

Collaborations

Heaton has collaborated with notable colleagues, including Frank H Spooner and Charles R Snider, who have also contributed to the field of semiconductor technology.

Conclusion

John L Heaton's innovative work in semiconductor technology, particularly through his patent on selective epitaxial growth of gallium arsenide, highlights his significant contributions to the industry. His career at Sperry Corporation and collaborations with esteemed colleagues further underscore his impact on the field.