The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1984
Filed:
Aug. 15, 1983
Applicant:
Inventors:
Frank H Spooner, Concord, MA (US);
Charles R Snider, Southboro, MA (US);
John L Heaton, Bedford, MA (US);
Assignee:
Sperry Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 2957 / ; 29578 ; 29580 ; 29591 ; 148175 ; 156612 ; 156647 ; 156648 ; 156653 ; 156657 ; 1566591 ; 427 84 ; 357 15 ; 357 59 ; 357 50 ; 357 56 ;
Abstract
A method of fabricating semiconductor devices on semi-insulating GaAs substrates is provided. Pre-etched holes in the substrate are covered with a dielectric which is etched to expose the substrate only at the bottom of the holes. Epitaxial growth of active GaAs in the holes may then proceed with a single crystallographic orientation. The dielectric covering the sidewalls of the holes prevents unwanted random growth and poor surface morphology of the active area.