Davenport, IA, United States of America

John Klem

This inventor holds 1 USPTO granted patent. Top assignee: University of Illinois. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Klem. Retrieved from https://idiyas.com/inventor/john-klem

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 47(Granted Patents)


Company Filing History:


Years Active: 1989

Loading Chart...
1 patent (USPTO):Explore Patents

Title: John Klem - Innovator in Semiconductor Technology

Introduction

John Klem is a notable inventor based in Davenport, Iowa. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances the performance of transistors.

Latest Patents

Klem holds a patent for a "Semiconductor device with strained InGaAs layer." This invention utilizes a strained In.sub.y Ga.sub.l-y As layer in a GaAs/Al.sub.x Ga.sub.l-x As transistor. The unique properties of In.sub.y Ga.sub.l-y As, which has a smaller bandgap than GaAs, eliminate the need for a large mole fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer. This advancement leads to improved operating characteristics for semiconductor devices.

Career Highlights

John Klem is affiliated with the University of Illinois, where he continues to engage in research and development in semiconductor technologies. His work has been instrumental in advancing the understanding and application of strained semiconductor layers.

Collaborations

Klem has collaborated with notable colleagues, including Timothy S. Henderson and Andrew A. Ketterson, contributing to various research projects and innovations in the field.

Conclusion

John Klem's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…