Company Filing History:
Years Active: 2014
Title: John Hodges, Jr.: Pioneering Innovations in Field Effect Transistors
Introduction
John Hodges, Jr. is an innovative inventor based in Ocoee, Florida. With a passion for advancing technology, he has made significant contributions to the field of electronics, particularly in the development of enhanced field effect transistors (FETs). His work aims to optimize performance in various applications, paving the way for future advancements in electronic devices.
Latest Patents
Hodges holds a patent for “Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement.” This groundbreaking patent describes a field effect transistor that includes a substrate, source and drain electrodes, and a ferroelectric material layer. The design features first and second gate electrodes to maintain an optimal polarization state of the ferroelectric material layer. Additionally, in alternative embodiments, the FET can be constructed with a film, encompassing gates and a ferroelectric material layer, which enhances its functionality and efficiency.
Career Highlights
John Hodges, Jr. has made strides in his career while working at SRI International. His innovative approach to technology and commitment to research have solidified his reputation as a noteworthy inventor in his field. The technologies he has developed contribute to meaningful advancements in electronic systems, particularly in sensing applications.
Collaborations
Throughout his career, Hodges has collaborated with respected colleagues, including Marc Rippen and Carl Biver, Jr. These partnerships exemplify the collective effort in the pursuit of technological advancements, combining talents and insights to drive innovation.
Conclusion
John Hodges, Jr. stands out as a prominent figure in the realm of electronic innovation. His patent on enhanced field effect transistors highlights his ability to push the boundaries of technology and improve device performance. As he continues to work at SRI International and collaborate with talented individuals in the industry, Hodges is poised to make an even greater impact in the world of inventions and patents.