The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Dec. 17, 2010
John Hodges, Jr., Ocoee, FL (US);
Marc Rippen, Clearwater Beach, FL (US);
Carl Biver, Jr., Belleair, FL (US);
John Hodges, Jr., Ocoee, FL (US);
Marc Rippen, Clearwater Beach, FL (US);
Carl Biver, Jr., Belleair, FL (US);
SRI International, Menlo Park, CA (US);
Abstract
In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.