Austin, TX, United States of America

John E Leiss

This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John E Leiss. Retrieved from https://idiyas.com/inventor/john-e-leiss

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: John E Leiss: Innovator in Semiconductor Technology

Introduction

John E Leiss is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique patent that enhances the fabrication process of semiconductor devices.

Latest Patents

John E Leiss holds a patent for a method titled "Self-aligned trench with selective trench fill." This patent describes a technique for fabricating a self-aligned trench structure in a semiconductor device. The method involves using an oxidation-resistant material with an opening as a masking layer. A sidewall spacer is applied to protect a portion of the substrate from etchant attack during trench formation. The trench is then filled with a selective deposition of trench fill material, utilizing a seeding material on the trench's sidewall as a nucleation site. After filling, the sidewall spacer is removed, and the substrate is oxidized to create an electrical insulation region around the trench. Finally, the mask layer is removed, and the remaining substrate is doped using the insulation region as a dopant mask. This innovative method has the potential to improve the efficiency and reliability of semiconductor devices.

Career Highlights

John E Leiss is associated with Motorola Corporation, where he has contributed to various projects in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout his career, John has collaborated with notable colleagues, including Richard D Sivan and James R Pfiester. These collaborations have fostered an environment of innovation and have led to significant advancements in their field.

Conclusion

John E Leiss is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His patent for a self-aligned trench structure exemplifies his innovative spirit and dedication to advancing technology. His contributions continue to influence the semiconductor industry today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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