Location History:
- Autin, TX (US) (2011)
- Austin, TX (US) (2011)
Company Filing History:
Years Active: 2011
Title: Innovations by John E. Asquith
Introduction
John E. Asquith is a notable inventor based in Austin, TX (US), recognized for his contributions to semiconductor technology. He holds 2 patents that showcase his expertise in radiation-assisted device testing and fault analysis.
Latest Patents
One of his latest patents is titled "Time Resolved Radiation Assisted Device Alteration." This invention outlines a method for testing semiconductor circuits using spatially resolved radiation. The process involves applying a test pattern to the circuit, scanning it with radiation, and determining pass-fail results to identify modulation locations. The method utilizes a continuous wave laser beam to enhance the testing accuracy.
Another significant patent by Asquith is "Radiation Induced Fault Analysis." This method focuses on locating defects in failed semiconductor devices. It includes applying a test pattern to the device and using radiation to induce faults in a correlation semiconductor device. By comparing test responses, the method determines defect locations, ensuring high correlation results.
Career Highlights
John E. Asquith is currently employed at Freescale Semiconductor, Inc., where he applies his innovative ideas to advance semiconductor technology. His work has significantly impacted the field, particularly in improving testing methodologies for semiconductor circuits.
Collaborations
Asquith collaborates with talented professionals such as Kent Erington and Kristofor J. Dickson, contributing to a dynamic work environment that fosters innovation.
Conclusion
John E. Asquith's contributions to semiconductor technology through his patents and work at Freescale Semiconductor, Inc. highlight his role as a key innovator in the field. His methods for testing and fault analysis continue to influence advancements in semiconductor design and reliability.