The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Apr. 22, 2008
Kent B. Erington, Austin, TX (US);
John E. Asquith, Autin, TX (US);
Kent B. Erington, Austin, TX (US);
John E. Asquith, Autin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of time resolved radiation assisted device alteration testing of a semiconductor circuit which includes performing spatially resolved radiation assisted circuit testing on the semiconductor circuit while applying a test pattern to determine a pass-fail modulation location, asynchronously scanning the semiconductor circuit with radiation while repeatedly applying the test pattern and providing pass-fail results, combining corresponding pass-fail results provided during the asynchronously scanning to determine a shifted pass-fail modulation indication, determining time shift information between the pass-fail modulation location and the shifted pass-fail modulation indication, and identifying at least one of the test vectors based on the time shift information. The radiation may be a continuous wave laser beam. The time shift information may be determined by scanning an image, incorporating graphics into the image indicating the pass-fail modulation location and the shifted pass-fail modulation indication, and measuring a pixel shift on the scanned image.