John D Baniecki

Title: Innovations of John D Baniecki in Ferroelectric Materials

Introduction

John D Baniecki is an accomplished inventor based in Palo Alto, CA. He has made significant contributions to the field of ferroelectric materials, particularly through his innovative patent related to cerium-doped ferroelectric materials. His work focuses on enhancing the performance and reliability of ferroelectric devices.

Latest Patents

John D Baniecki holds a patent for "Cerium-doped ferroelectric materials and related devices and methods." This patent discloses ferroelectric materials, specifically cerium-doped hafnium-zirconium-oxide (HZO) layers. The invention enables reliable fabrication processes and significantly improves cycling endurance performance. The doping of cerium in HZO films stabilizes the polar orthorhombic phase, enhancing ferroelectric capabilities. The patent also outlines exemplary fabrication techniques and device structures, including metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) structures.

Career Highlights

John D Baniecki is affiliated with Leland Stanford Junior University, where he continues to advance research in ferroelectric materials. His innovative approach to doping cerium in HZO films has opened new avenues for the development of advanced electronic devices.

Collaborations

Throughout his career, John has collaborated with notable colleagues, including Paul C McIntyre and Wilman Tsai. These collaborations have further enriched his research and contributed to the advancement of ferroelectric technology.

Conclusion

John D Baniecki's work in cerium-doped ferroelectric materials represents a significant advancement in the field of electronics. His innovative patent and collaborations highlight his commitment to enhancing device performance and reliability.