Leland Stanford Junior University

John D Baniecki

Wilman Tsai

Paul C McIntyre

Zhouchangwan Yu

Balreen Saini

Ferroelectric materials and more particularly cerium-doped ferroelectric materials and related devices and methods are disclosed. Aspects of the present disclosure relate to ferroelectric layers of hafnium-zirconium-oxide (HZO) doped with cerium that enable reliable ferroelectric fabrication processes and related structures with significantly improved cycling endurance performance. Such doping in ferroelectric layers also provides the capability to modulate polarization to achieve a desired operation voltage range. Doping concentrations of cerium in HZO films are disclosed with ranges that provide a stabilized polar orthorhombic phase in resulting films, thereby promoting ferroelectric capabilities. Exemplary fabrication techniques for doping cerium in HZO films as well as exemplary device structures including metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) structures are also disclosed.

Growing community of inventors

Palo Alto, CA, United States of America

John D Baniecki