Albuquerque, NM, United States of America

John Canaris


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Innovations of John Canaris in Radiation Immunity

Introduction

John Canaris is an accomplished inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, particularly in enhancing the immunity of CMOS circuits to radiation-induced failures. His innovative work has implications for various applications, especially in environments where radiation exposure is a concern.

Latest Patents

John Canaris holds a patent for a "Mechanism for preventing radiation induced latch-up in CMOS integrated circuits." This invention focuses on improving the immunity of CMOS circuits formed in semiconductor substrates against radiation-induced latch-up and single event upset. The architecture described in his patent can be utilized with N-Well, P-Well, and dual Well processes, showcasing its versatility and effectiveness.

Career Highlights

Canaris is affiliated with the University of New Mexico, where he continues to contribute to research and development in semiconductor technology. His work has been instrumental in advancing the understanding of how to mitigate the effects of radiation on integrated circuits. With a patent portfolio that includes 1 patent, he has established himself as a key figure in this specialized field.

Collaborations

Throughout his career, John Canaris has collaborated with notable colleagues, including Sterling R. Whitaker and Kelly Brian Cameron. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.

Conclusion

John Canaris's contributions to the field of semiconductor technology, particularly in radiation immunity, highlight his role as an influential inventor. His work not only advances technical knowledge but also provides practical solutions for industries affected by radiation exposure.

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