Company Filing History:
Years Active: 1997
Title: John B. Fenn: Innovator in Moisture Barrier Technology
Introduction
John B. Fenn is a notable inventor based in Suffield, CT (US). He has made significant contributions to the field of electrochemical cell technology. With a total of 2 patents, Fenn's work focuses on developing innovative solutions to enhance the performance and reliability of moisture-sensitive devices.
Latest Patents
Fenn's latest patents include a "Light Transparent Multilayer Moisture Barrier for Electrochemical Cell Condition Tester." This invention is designed to prevent moisture from compromising the effectiveness of moisture-sensitive cell condition testers. The barrier consists of a series of very thin, alternating layers of inorganic and organic materials applied to a flexible, polymeric substrate. Each layer is formed through a deposition or coating process, with a thickness of less than 5 microns. The organic material used is a hydrophobic polymer, while the inorganic material can be a metal oxide, nitride, glass, or silicon.
Career Highlights
Fenn is currently associated with Duracell Inc., where he continues to innovate in the field of electrochemical technologies. His work has been instrumental in advancing moisture barrier solutions that are crucial for the longevity and performance of various electronic devices.
Collaborations
Fenn has collaborated with notable colleagues such as Jack Treger and Bryan Christopher Lagos. Their combined expertise has contributed to the successful development of advanced technologies in their field.
Conclusion
John B. Fenn's contributions to moisture barrier technology exemplify the importance of innovation in enhancing the functionality of electrochemical devices. His patents reflect a commitment to improving product reliability and performance in the face of environmental challenges.
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