Company Filing History:
Years Active: 1992
Title: John B Berryhill: Innovator in High-Speed Light-Emitting Diodes
Introduction
John B Berryhill is a notable inventor based in Logan, UT (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high-speed light-emitting diodes. His innovative work has implications for various applications in electronics and optoelectronics.
Latest Patents
John B Berryhill holds a patent for a high-speed heterojunction light-emitting diode. This invention involves forming a diode by providing a dielectric layer on a heavily doped semiconductor substrate that has a short minority carrier lifetime. A semiconductor layer of opposite conductivity to the substrate is epitaxially grown through vias in the dielectric layer. This design results in a junction area that is equal to the useful light-emitting area. An electrical contact is formed on the laterally overgrown area of the epitaxially grown material. The manufacturing process of this diode is compatible with planar processing techniques commonly used in integrated circuit manufacture. He has 1 patent to his name.
Career Highlights
John B Berryhill is associated with the University of Delaware, where he contributes to research and development in semiconductor technologies. His work has been instrumental in advancing the understanding and application of light-emitting diodes in various fields.
Collaborations
John has collaborated with Allen M Barnett, further enhancing the research output and innovation in their projects.
Conclusion
John B Berryhill's contributions to the field of high-speed light-emitting diodes exemplify the impact of innovative thinking in technology. His work continues to influence advancements in semiconductor applications.